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Film bulk acoustic resonator device, has piezoelectric layer made of aluminum nitride formed on lower electrode film of acoustic resonators

机译：膜体声波谐振器装置，在该声波谐振器的下部电极膜上形成有由氮化铝构成的压电体层。

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摘要

The device includes a gold or titanium seed layer (39) formed on the upper surface of a substrate structure (30). One or more acoustic resonator parts (40) having a respective lower electrode film (42) are arranged on the seed layer and are mode of molybdenum. A piezoelectric layer (44) made of aluminum nitride (AlN) is arranged on the lower electrode film. An upper electrode film is formed on the piezoelectric layer. An independent claim is included for a method of manufacturing a film bulk acoustic resonator device.

机译：该装置包括形成在衬底结构（30）的上表面上的金或钛种子层（39）。具有相应的下部电极膜（42）的一个或多个声谐振器部分（40）布置在籽晶层上并且是钼的模式。由氮化铝（AlN）制成的压电层（44）布置在下电极膜上。上电极膜形成在压电层上。包括一种制造薄膜压电谐振器装置的方法的独立权利要求。

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公开/公告号DE10330136A1

专利类型
公开/公告日2004-11-04

原文格式PDF
申请/专利权人 SAMSUNG ELECTRO-MECHANICS CO. LTD.;
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申请/专利号DE2003130136
发明设计人 KYOUNG JE HONG;SUNWOO KOOK HYUN;
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申请日2003-07-04
分类号H03H9/13;H03H3/02;H03H9/15;
国家 DE
入库时间 2022-08-21 22:43:16

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