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LDMOSFET for large signal amplifier, e.g. transmitter PA, has opposite polarity region in substrate adjoining the drain

机译：用于大信号放大器的LDMOSFET，例如发射器PA在与漏极相邻的基板中具有相反极性的区域

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摘要

Field effect transistor (FET) has a doped substrate (30) of a first polarity, a drain (50, 52, 54) of opposite second polarity and a source (40) that is alongside the drain and has similar doping to it. A channel (98) runs between drain and source. A region (102) with second polarity type doping is connected to the drain in a region alongside the drain such that there are regions of alternating polarity in the substrate next to the drain.

机译：场效应晶体管（FET）具有第一极性的掺杂衬底（30），相反的第二极性的漏极（50、52、54）和与该漏极并排的掺杂类似的源极（40）。沟道（98）在漏极和源极之间延伸。具有第二极性类型掺杂的区域（102）在与漏极相邻的区域中连接到漏极，使得在衬底中靠近漏极的区域中存在交替极性的区域。

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公开/公告号DE10310552A1

专利类型
公开/公告日2004-09-30

原文格式PDF
申请/专利权人 INFINEON TECHNOLOGIES AG;
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申请/专利号DE2003110552
发明设计人 TADDIKEN HANS;KRUMBEIN ULRICH;
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申请日2003-03-11
分类号H01L29/78;H01L21/336;
国家 DE
入库时间 2022-08-21 22:43:25

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