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Thyristor component with improved blocking in backwards direction has four semiconductor zones with two meeting at an inclined edge and a fourth zone split by the second
Thyristor component with improved blocking in backwards direction has four semiconductor zones with two meeting at an inclined edge and a fourth zone split by the second
A thyristor component comprises four semiconductor zones (20,30,50,40) with oppositely doped first and second regions having an inclined transition zone at an edge. The fourth zone (40) contains oppositely doped third zones (50) and is interrupted in the edge region by part of the second zone which extends to the front. Independent claims are also included for the following: (a) a thyristor as above in which the dopant concentration in the first zone decreases towards the edge;and (b) a semiconductor element as above
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