首页> 外国专利> Process for the structured selective metallization of a surface of a substrate comprises preheating the substrate to a temperature below the deposition temperature of a predetermined metal and depositing the metal in predetermined regions

Process for the structured selective metallization of a surface of a substrate comprises preheating the substrate to a temperature below the deposition temperature of a predetermined metal and depositing the metal in predetermined regions

机译:用于对衬底的表面进行结构化的选择性金属化的方法包括:将衬底预热至低于预定金属的沉积温度的温度,并将金属沉积在预定区域中

摘要

Process for the structured selective metallization of a surface of a substrate (10) comprises preheating the substrate to a temperature below the deposition temperature of a predetermined metal dissolved in a fluid provided above the surface of the substrate, and depositing the metal in predetermined regions (19) on the surface of the substrate by locally raising the temperature on the surface of the substrate above the deposition temperature.
机译:用于对基板(10)的表面进行结构化选择性金属化的工艺,包括将基板预热至低于溶解在设置于基板表面上方的流体中的预定金属的沉积温度的温度,以及在预定区域内沉积金属( 19)通过将衬底表面上的温度局部升高到高于沉积温度来使衬底表面上的温度升高。

著录项

  • 公开/公告号DE10245928A1

    专利类型

  • 公开/公告日2004-04-08

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20021045928

  • 发明设计人 SCHMID GUENTER;

    申请日2002-09-30

  • 分类号C23C18/18;H01L21/60;

  • 国家 DE

  • 入库时间 2022-08-21 22:43:51

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