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Radiation-emitting semiconductor component used as a VCSEL comprises an active layer emitting photons and an epitaxial p-doped covering layer of higher cross-conductivity for the homogeneous current injection into the active layer
Radiation-emitting semiconductor component used as a VCSEL comprises an active layer emitting photons and an epitaxial p-doped covering layer of higher cross-conductivity for the homogeneous current injection into the active layer
Radiation-emitting semiconductor component comprises an active layer emitting photons and an epitaxial p-doped AlGaAs covering layer of higher cross-conductivity for the homogeneous current injection into the active layer. The covering layer is doped with two different p-dopants.
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