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SINGLE MODE GaN-BASED SURFACE EMITTING LASER DIODE AND FABRICATING METHOD THEREOF TO OBTAIN CHARACTERISTIC OF SINGLE LONGITUDINAL MODE OSCILLATION
SINGLE MODE GaN-BASED SURFACE EMITTING LASER DIODE AND FABRICATING METHOD THEREOF TO OBTAIN CHARACTERISTIC OF SINGLE LONGITUDINAL MODE OSCILLATION
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机译：单模氮化镓基面发射激光二极管及其制造方法以取得单纵模振动的特性
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摘要
PURPOSE: A single mode GaN-based surface emitting laser diode is provided to obtain a characteristic of single longitudinal mode oscillation by generating light of ultraviolet and blue wavelengths of 400 nanometers. CONSTITUTION: A single mode GaN-based surface emitting laser diode is formed on a semiconductor substrate, including a lower DBR(distributed Bragg reflector)(50), a cavity(40) and an upper DBR(60). A pair of a GaN layer(51,61) of a relatively high index of refraction and an air layer(52,62) of a relatively low index of refraction are stacked three to fifteen times such that the GaN layer has a thickness of lambda/4n wherein lambda is a wavelength of generated light and n is an index of refraction of the constitution material of the DBR.
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