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METHOD FOR FABRICATING GALLIUM NITRIDE WAFER TO EASILY SEPARATE SAPPHIRE SUBSTRATE AND AVOID DETERIORATION CAUSED BY ZnO BUFFER LAYER
METHOD FOR FABRICATING GALLIUM NITRIDE WAFER TO EASILY SEPARATE SAPPHIRE SUBSTRATE AND AVOID DETERIORATION CAUSED BY ZnO BUFFER LAYER
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机译：制备氮化镓晶片以轻松分离蓝宝石基质并避免ZnO缓冲层引起的劣化的方法
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摘要
PURPOSE: A method for fabricating a gallium nitride wafer is provided to easily separate a sapphire substrate and avoid deterioration caused by a ZnO buffer layer between substrate and a gallium nitride thick layer by preventing zinc from being excessively volatilized from the ZnO buffer layer. CONSTITUTION: ZnO is grown on a substrate(31) to form the first buffer layer(32). A buffer material with respect to gallium nitride is grown at a temperature at which zinc is not volatilized from the first buffer layer, so as to form the second buffer layer(33). A gallium nitride thick layer(34) is grown on the second buffer layer. The substrate and the first buffer layer are eliminated.
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