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SILICON CRYSTALLIZATION SYSTEM AND CRYSTALLIZING METHOD THEREOF USING LASER BEAMS TO INCREASE PULSE DURATION TIME
SILICON CRYSTALLIZATION SYSTEM AND CRYSTALLIZING METHOD THEREOF USING LASER BEAMS TO INCREASE PULSE DURATION TIME
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机译：利用激光束增加脉冲持续时间的硅晶化系统及其晶化方法
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摘要
M is a 2 or bigger integer, and n is 1 or more to work as jeongsura, m laser generators; One laser beam splitter, is used to divide recombination laser beam, is obtained by synthesis m m in the laser beam that generating device of laser is generated into the sub- laser beams of n; The separated laser beam of each n for controlling n light fields; Irradiation by the sub- laser beams of n n of light field silicon crystallization system includes that the n phase depositions that can be attached on amorphous silicon layer are an insulating substrate with crystallizing polysilicon layer.
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机译：M为2或更大的整数，n为1或更大以用作jeongsura，m个激光发生器;一个激光分束器用于将重组激光束分开，该激光分束器是通过将产生激光的装置的激光束中的m m合成为n个子激光束而得到的;每n个分开的激光束用于控制n个光场; n n个光场硅结晶系统的子激光束的照射包括：可以附着在非晶硅层上的n个相沉积是具有结晶多晶硅层的绝缘基板。
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