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PRECURSOR SOLUTION USED FOR MOCVD PROCESS AND METHOD FOR CONTROLLING THE COMPOSITION OF MOCVD DEPOSITED PCMO

机译:用于MOCVD工艺的前体溶液和控制MOCVD沉积PCMO组成的方法

摘要

PURPOSE: A precursor solution and a method for controlling the composition of MOCVD deposited PCMO are provided, thereby controlling the composition of the PCMO thin film materials, the ratio of the metals with respect to each other, fine tuning the deposition ratios, and determining the affects of changes in vaporizer temperature or substrate temperature on the deposition rates of different precursors. CONSTITUTION: The single solution MOCVD precursor for depositing PCMO comprises a Pr(tmhd)3 precursor, a Mn(tmhd)3 precursor and a calcium precursor dissolved in an organic solvent, wherein the calcium precursor is Ca(tmhd)2 or Ca(hfac)2; the organic solvent comprises buytlether and tetraglyme in a volumetric ratio of between 2:1 and 5:1, preferably 3:1; the organic solvent comprises a solvent selected from the group consisting of octane, THF, butyl acetate, and iso-propanol; and the Pr(tmhd)3 precursor, the Mn(tmhd)3 precursor and the calcium precursor provide between 0.05 and 0.5 M/L of metals to be deposited. An MOCVD process for depositing PCMO comprises the steps of: (a) providing a substrate within an MOCVD chamber; (b) introducing oxygen into the MOCVD chamber; (c) heating the substrate to a predetermined substrate temperature; (d) heating a vaporizer attached to the MOCVD chamber to a predetermined vaporizer temperature; (e) introducing a single solution precursor comprising a Pr precursor, a Ca precursor and an Mn precursor dissolved in an organic solvent at a predetermined molar ratio into the vaporizer, whereby the precursor is vaporized to form a precursor vapor; and (f) delivering the precursor vapor into the chamber using a carrier gas, whereby the precursor vapor deposits a thin film of PCMO on the substrate.
机译:目的:提供一种前驱体溶液和一种用于控制MOCVD沉积的PCMO组成的方法,从而控制PCMO薄膜材料的组成,金属彼此之间的比率,微调沉积比率并确定蒸发器温度或衬底温度的变化对不同前体沉积速率的影响。组成:用于沉积PCMO的单溶液MOCVD前驱体包括Pr(tmhd)3前驱体,Mn(tmhd)3前驱体和溶解在有机溶剂中的钙前驱体,其中钙前驱体为Ca(tmhd)2或Ca(hfac) )2;所述有机溶剂包括体积比为2:1至5:1,优选3:1的布氏和四甘醇二甲醚;有机溶剂包括选自辛烷,THF,乙酸丁酯和异丙醇的溶剂; Pr(tmhd)3前体,Mn(tmhd)3前体和钙前体提供0.05-0.5 M / L的待沉积金属。用于沉积PCMO的MOCVD工艺包括以下步骤:(a)在MOCVD腔室内提供衬底; (b)将氧气引入MOCVD室; (c)将基板加热到预定的基板温度; (d)将附着在MOCVD腔室上的汽化器加热到预定的汽化器温度; (e)将包含以预定摩尔比溶解在有机溶剂中的Pr前驱体,Ca前驱体和Mn前驱体的单一溶液前驱体引入汽化器,从而使前驱体汽化以形成前驱体蒸气; (f)使用载气将前体蒸气输送到腔室中,由此前体蒸气将PCMO薄膜沉积在基板上。

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