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PRECURSOR SOLUTION USED FOR MOCVD PROCESS AND METHOD FOR CONTROLLING THE COMPOSITION OF MOCVD DEPOSITED PCMO
PRECURSOR SOLUTION USED FOR MOCVD PROCESS AND METHOD FOR CONTROLLING THE COMPOSITION OF MOCVD DEPOSITED PCMO
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机译:用于MOCVD工艺的前体溶液和控制MOCVD沉积PCMO组成的方法
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摘要
PURPOSE: A precursor solution and a method for controlling the composition of MOCVD deposited PCMO are provided, thereby controlling the composition of the PCMO thin film materials, the ratio of the metals with respect to each other, fine tuning the deposition ratios, and determining the affects of changes in vaporizer temperature or substrate temperature on the deposition rates of different precursors. CONSTITUTION: The single solution MOCVD precursor for depositing PCMO comprises a Pr(tmhd)3 precursor, a Mn(tmhd)3 precursor and a calcium precursor dissolved in an organic solvent, wherein the calcium precursor is Ca(tmhd)2 or Ca(hfac)2; the organic solvent comprises buytlether and tetraglyme in a volumetric ratio of between 2:1 and 5:1, preferably 3:1; the organic solvent comprises a solvent selected from the group consisting of octane, THF, butyl acetate, and iso-propanol; and the Pr(tmhd)3 precursor, the Mn(tmhd)3 precursor and the calcium precursor provide between 0.05 and 0.5 M/L of metals to be deposited. An MOCVD process for depositing PCMO comprises the steps of: (a) providing a substrate within an MOCVD chamber; (b) introducing oxygen into the MOCVD chamber; (c) heating the substrate to a predetermined substrate temperature; (d) heating a vaporizer attached to the MOCVD chamber to a predetermined vaporizer temperature; (e) introducing a single solution precursor comprising a Pr precursor, a Ca precursor and an Mn precursor dissolved in an organic solvent at a predetermined molar ratio into the vaporizer, whereby the precursor is vaporized to form a precursor vapor; and (f) delivering the precursor vapor into the chamber using a carrier gas, whereby the precursor vapor deposits a thin film of PCMO on the substrate.
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