首页> 外国专利> Fabricating Method of Thick Film Using Compound of Relaxer Ferroelectric Ceramics and Polymer Matrix

Fabricating Method of Thick Film Using Compound of Relaxer Ferroelectric Ceramics and Polymer Matrix

机译:弛豫铁电陶瓷与聚合物基质复合制备厚膜的方法

摘要

PURPOSE: Provided is a preparation method of relaxer ferroelectric ceramic thick films for multi-layer ceramic capacitors by spreading ferroelectric ceramic powder on a high molecular matrix homogeneously without sintering. CONSTITUTION: The preparation method comprises the steps of: grinding Pb-based relaxer ferroelectric ceramics, Pb(B'2+1/3 B''5+2/3)O3 system or Pb(B'3+1/2 B''5+1/2)O3 system, where B'2+ is one of Mg2+, Ni2+, Zn2+ and Cd2+, B''5+ is one of Nb5+ and Ta5+, and B'3+ is one of Fe3+, Sc3+ and In3+; melting a high molecular material, polypropylene less than 10000 in molecular weight, at 180-220deg.C; adding relaxer ferroelectric ceramic powder to melted high molecular material, and mixing in a rate of 20-40rpm for 20-40min for a homogeneous mixture; forming a thick film by spin-coating or extruding the mixture on a substrate, Cu-substrate, where the dropping amounts of the mixture are 30-60drops in a rate of 1-3drops/min, and the substrate is rotated in a rate of 300-500rpm, in the spin coating. The resultant ferroelectric thick films for multi-layer ceramic capacitors prepared without sintering have 1.32-2.90micrometer of thickness and 78-1905 of dielectric constant(at 25deg.C).
机译:目的:提供一种用于多层陶瓷电容器的弛豫铁电陶瓷厚膜的制备方法,该方法通过将铁电陶瓷粉末均匀地铺展在高分子基质上而不进行烧结。组成:该制备方法包括以下步骤:研磨Pb基弛豫铁电陶瓷,Pb(B'2 + 1/3 B''5 + 2/2/3)O3体系或Pb(B'3 + 1/2 B' '5 + 1/2)O3系统,其中B'2 +是Mg2 +,Ni2 +,Zn2 +和Cd2 +中的一种,B''5 +是Nb5 +和Ta5 +中的一种,而B'3 +是Fe3 +,Sc3 +和中的一种In3 +;在180-220℃下熔化分子量小于10000的高分子材料聚丙烯。向熔融的高分子材料中加入弛豫铁电陶瓷粉,以20-40rpm的速度混合20-40min,得到均匀的混合物。通过将混合物旋涂或挤出到基板Cu基板上形成厚膜,其中混合物的滴入量为1-3滴/分钟的30至60滴,并且基板的旋转速度为300-500rpm,在旋涂中。所得的未经烧结制备的用于多层陶瓷电容器的铁电厚膜具有1.32-2.90μm的厚度和78-1905的介电常数(在25℃)。

著录项

  • 公开/公告号KR100406646B1

    专利类型

  • 公开/公告日2003-11-21

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20000059080

  • 发明设计人 김병국;박재환;

    申请日2000-10-07

  • 分类号C04B35/634;C04B35/01;H01G4/12;

  • 国家 KR

  • 入库时间 2022-08-21 22:50:30

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号