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USE OF DEUTERATED GASES FOR THE VAPOR DEPOSITION OF THIN FILMS FOR LOW-LOSS OPTICAL DEVICES AND WAVEGUIDES

机译:使用氘化气体对低损耗光学器件和波导的薄膜进行气相沉积

摘要

Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.
机译:使用由氘代物质组成的蒸气气相沉积非晶态含硅薄膜的装置和方法。通过这种方法在衬底晶片上生长的薄膜包含氘,但是几乎没有氢。与使用常规气相沉积技术在含氢前体的薄膜中形成的波导中的损耗相比,由使用该方法形成的光波导组成的光学器件在通常用于光通信的近红外光谱中具有显着降低的光吸收或损耗。在一种变型中,光学器件形成在形成在诸如硅衬底的衬底上的氧化硅层上。某些变体的光学器件属于化学物种SiOxNy:D。由于形成方法不需要退火,因此可以在电子和光学器件或其部分上生长薄膜而不会损坏那些器件。

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