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LOW TEMPERATURE DEPOSITION OF SILICON BASED THIN FILMS BY SINGLE-WAFER HOT-WALL RAPID THERMAL CHEMICAL VAPOR DEPOSITION
LOW TEMPERATURE DEPOSITION OF SILICON BASED THIN FILMS BY SINGLE-WAFER HOT-WALL RAPID THERMAL CHEMICAL VAPOR DEPOSITION
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机译:单晶片热壁快速热化学气相沉积法低温沉积硅基薄膜
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摘要
The present invention provides a single-wafer hot-wall RTCVD system and method capable of achieving high deposition rates, preferably of up to and over 1000Å/min, to deposit silicon nitride films or layers (Si3N4) using reactants including but not limited to Si2H6 with NH3 at a low temperatures of up to approximately 550°C.
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机译:本发明提供了一种单晶片热壁RTCVD系统和方法,该系统和方法能够使用包括但不限于Si 2 H 6的反应物来实现高沉积速率,优选地高达并超过1000Å/ min,以沉积氮化硅膜或层(Si 3 N 4)。在大约550°C的低温下使用NH3。
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