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LATERAL MOVEMENT OF SCREW DISLOCATIONS DURING HOMOEPITAXIAL GROWTH AND DEVICES YIELDED THEREFROM FREE OF THE DETRIMENTAL EFFECTSOF THE SCREW DISLOCATIONS
LATERAL MOVEMENT OF SCREW DISLOCATIONS DURING HOMOEPITAXIAL GROWTH AND DEVICES YIELDED THEREFROM FREE OF THE DETRIMENTAL EFFECTSOF THE SCREW DISLOCATIONS
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机译:同位生长期间丝杠错位的横向运动和屈服的设备不受丝杠错位的有害影响
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摘要
The present invention is related to a method that enables and improves wide bandgap homoepitaxial layers to be grown on axis single crystal substrates, particularly SiC. The lateral positions of the screw dislocations in epitaxial layers are predetermined instead of random, which allows devices to be reproducibly patterned to avoid performance degrading crystal defects normally created by screw dislocations.
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