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ONE-TIME UV-PROGRAMMABLE NON-VOLATILE SEMICONDUCTOR MEMORY AND METHOD OF PROGRAMMING SUCH A SEMICONDUCTOR MEMORY
ONE-TIME UV-PROGRAMMABLE NON-VOLATILE SEMICONDUCTOR MEMORY AND METHOD OF PROGRAMMING SUCH A SEMICONDUCTOR MEMORY
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机译：一次性紫外线可程式化的非挥发性半导体记忆体及这类记忆体的编程方法
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Title: ONE-TIME UV-PROGRAMMABLE NON-VOLATILE SEMICONDUCTOR MEMORY AND METHOD OF PRO-GRAMMING SUCH A SEMICONDUCTOR MEMORY[err]Abstract: One-time UV-programmable read-only memory (1) comprising a number of memory cells in the form of MOS transistors (T) which are arranged in a matrix of rows and columns, each transistor comprising a source and a drain region (12) and a channel region (13) formed in a surface region (11) of a semiconductor substrate (10). Said semiconductor regions adjoin a surface (14) of the semiconductor substrate on which surface a layer structure (17) is formed comprising floating gates (16) and control gates (15). The layer structure is provided with windows (18) through which UV radiation can reach the edges of the floating gates. The memory is further provided with means for generating an electric voltage between the substrate (10) and the control gates (16) during programming the memory by means of UV radiation. Thus, the memory can be programmed without being externally contacted during programming.
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