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Semiconductor process parameter determining method, semiconductor process parameter determining system, and semiconductor process parameter determining program

机译：半导体工艺参数确定方法，半导体工艺参数确定系统和半导体工艺参数确定程序

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摘要

There is provided a semiconductor process determining method comprising: Step ST1 of inputting an input parameter from a input part; Step ST2 of obtaining the delay time of a certain circuit by means of simulation on a gate level by letting the output parameter of each wiring layer be a variable; Step ST3 of judging whether or not the simulation is completed; Step ST4 of extracting the output parameter of each wiring layer giving the shortest delay time; and Step ST5 of outputting the extracted output parameter of each wiring layer in a display part.

机译：提供一种半导体工艺确定方法，包括：步骤ST 1 ：从输入部件输入输入参数;以及步骤ST 2 ，其中，通过使各布线层的输出参数为变量，通过在栅极电平上进行仿真来求出某个电路的延迟时间。步骤ST 3 ，判断仿真是否完成;步骤ST 4 ：提取各布线层的输出参数，给出最短的延迟时间;步骤ST 5 是将提取出的各配线层的输出参数输出到显示部。 展开▼

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公开/公告号US6698000B2

专利类型

公开/公告日2004-02-24

原文格式PDF

申请/专利权人 MITSUBISHI DENKI KABUSHIKI KAISHA;
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申请/专利号US20010986711

发明设计人 GENICHI TANAKA;
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申请日2001-11-09

分类号G06F175/00;

国家 US

入库时间 2022-08-21 23:13:43

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