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Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma
Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma
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机译：电子密度测量和等离子体过程控制系统，使用锁定在包含等离子体的开放式谐振器上的微波振荡器
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摘要
A system for measuring plasma electon densities (e.g., in the range of 1010 to 1012 cm−3) and for controlling a plasma generator (240). Measurement of the plasma density is essential if plasma-assisted processes, such depositions or etches, are to be adequately controlled using a feedback control. Both the plasma measurement method and system generate a control voltage that in turn controls the plasma generator (240) to maintain the plasma electron density at a pre-selected value. The system utilizes a frequency stabilization system to lock the frequency of a local oscillator (100) to the resonant frequency of an open microwave resonator (245) when the resonant frequency changes due to the introduction of a plasma within the open resonator. The amplified output voltage of a second microwave discriminator may be used to control a plasma generator (240).
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