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High performance memory column group repair scheme with small area penalty
High performance memory column group repair scheme with small area penalty
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机译：具有小面积损失的高性能存储列组修复方案
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摘要
A memory having built-in self repair with column shifting is provided. The total single columns are divided into smaller column groups and a bad column group is repaired with a redundant column group. Each column group is multiplexed into a pair of column group bitlines, which are fed into a shift circuit for the column group and a shift circuit for an adjacent column group. The shift circuit for the column group nearest the redundant column group receives the bitlines for that column group and the redundant column group bitlines. If a bad column group is detected, then starting with the column group furthest from the redundant column group, the shift circuit for each column group before the bad column group is deactivated. The shift circuit for the bad column group and the shift circuit for each column group after the bad column group are activated. Therefore, the bad column group is shifted out of the memory and the redundant column group fills the void.
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