首页> 外国专利> Integrated circuit formed organic field effect transistors (OFET), a method of manufacturing the organic field effect transistor, from the organic field effect transistor, and the use of the integrated circuit

Integrated circuit formed organic field effect transistors (OFET), a method of manufacturing the organic field effect transistor, from the organic field effect transistor, and the use of the integrated circuit

机译:集成电路形成的有机场效应晶体管(OFET),由有机场效应晶体管制造有机场效应晶体管的方法以及集成电路的用途

摘要

The present invention relates to an organic field-effect transistors with improved performance. The output current is increased by the structure of the current multiple channels on the OFET. The current channel of the plurality is intended to contribute to the output current all. It is possible by not located on a plane parallel to the substrate surface, the source and drain electrodes, shorter than previously possible the distance between the source and drain. As a result, the current channel is shorter than a faster switching speed can be obtained. Finally, the present invention relates to an integrated circuit in which transistors are arranged in a small area on the substrate.
机译:本发明涉及一种具有改进性能的有机场效应晶体管。通过OFET上的多个电流通道的结构来增加输出电流。多个电流通道旨在全部贡献输出电流。通过不位于平行于基板表面的平面上,可以使源极和漏极比先前可能的源极和漏极之间的距离短。结果,电流通道短于可获得更快的开关速度。最后,本发明涉及一种集成电路,其中在衬底上的小区域中布置有晶体管。

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