首页> 外国专利> PATTERN FORMING METHOD, MANUFACTURING OF MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC HEAD USING METHOD, AND HEAD SUSPENSION ASSEMBLY AND MAGNETIC DISK UNIT

PATTERN FORMING METHOD, MANUFACTURING OF MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC HEAD USING METHOD, AND HEAD SUSPENSION ASSEMBLY AND MAGNETIC DISK UNIT

机译:图案形成方法,磁阻效应元件的制造和磁头的使用方法,以及磁头悬挂组件和磁碟单元

摘要

PROBLEM TO BE SOLVED: To eliminate any unnecessary formation left behind on the peripheral part or the like of a patterned film which is cleaned by dry etching by using a resist pattern for lift-off as a mask.;SOLUTION: A pattern forming method forms a resist pattern for lift-off on a first film constituted of a plurality of layers 23-28 which are formed on a substrate 101. The first film is subjected to patterning by dry etching by using the resist pattern as a mask. After that, a second film 30 is formed in the state that the resist pattern exists on the first film. A substrate 101 in this state is etched. This etching stage includes a stage wherein the incident angle of etching particles is set at least 60° and at most 90° with respect to the normal line direction of the substrate 101, and dry etching is performed.;COPYRIGHT: (C)2004,JPO&NCIPI
机译:解决的问题:通过使用用于剥离的抗蚀剂图案来消除通过干法蚀刻而清洁的图案化膜的周边部分等上残留的不必要的形成;解决方案:形成图案形成方法在形成于基板101上的,由多层23-28构成的第一膜上剥离的抗蚀剂图案。使用该抗蚀剂图案作为掩模,通过干蚀刻对第一膜进行构图。之后,以抗蚀剂图案存在于第一膜上的状态形成第二膜30。蚀刻该状态下的基板101。该蚀刻阶段包括将蚀刻颗粒的入射角设定为至少60°的阶段。最多90度相对于基板101的法线方向进行干蚀刻。版权所有:(C)2004,JPO&NCIPI

著录项

  • 公开/公告号JP2004253437A

    专利类型

  • 公开/公告日2004-09-09

    原文格式PDF

  • 申请/专利权人 TDK CORP;

    申请/专利号JP20030039400

  • 发明设计人 KAGAMI TAKERO;SATO KAZUKI;

    申请日2003-02-18

  • 分类号H01L43/12;C23F1/00;G11B5/39;H01L43/08;

  • 国家 JP

  • 入库时间 2022-08-21 23:29:28

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