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NONVOLATILE MEMORY USING FERROELECTRIC GATE FIELD-EFFECT TRANSISTOR

机译：铁电栅极场效应晶体管的非易失性存储器

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摘要

PPROBLEM TO BE SOLVED: To provide a ferroelectric gate field-effect tranisistor and a nonvolatile memory architecture, formed using it. PSOLUTION: A vertical ferroelectric gate field-effect transistor (FeGFET) is provided with a substrate and a first drain/source electrode formed on the top surface of the substrate. A conductive channel region is formed on the top surface of the first drain/source electrode, and electrically connected to it. The FeGFET device is further provided with a ferroelectric gate region formed on at least one sidewall of the channel region, at least one gate electrode electrically contacting the ferroelectric gate region, and a second drain/source electrode, formed on the top surface of the channel region and electrically contacts the channel region. The ferroelectric gate region can be selectively polarized, depending on the potential supplied between the gate electrode and at least one of first and second drain/source electrode. A nonvolatile memory array, provided with a plurality of FeGFET device, is formed. PCOPYRIGHT: (C)2004,JPO

机译：

要解决的问题：提供铁电栅极场效应晶体管和非易失性存储器架构，并以此为基础。

解决方案：垂直铁电栅场效应晶体管（FeGFET）配备有一个衬底和一个在衬底顶面上形成的第一漏/源电极。导电沟道区形成在第一漏/源电极的顶表面上，并与之电连接。 FeGFET器件还具有：在沟道区的至少一个侧壁上形成的铁电栅区;与铁电栅区电接触的至少一个栅电极;以及在沟道的顶面上形成的第二漏/源电极。区域并与沟道区域电接触。取决于在栅电极与第一和第二漏/源电极中的至少一个之间提供的电势，可以选择性地极化铁电栅区域。形成具有多个FeGFET器件的非易失性存储器阵列。

版权：（C）2004，日本特许厅展开▼

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公开/公告号JP2004119970A

专利类型
公开/公告日2004-04-15

原文格式PDF
申请/专利权人 INTERNATL BUSINESS MACH CORP IBM;
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申请/专利号JP20030305482
发明设计人 MISEWICH JAMES A;REOHR WILLIAM ROBERT;SCHROTT ALEJANDRO GABRIEL;RIIKON WAN;
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申请日2003-08-28
分类号H01L27/105;G11C11/22;H01L21/8247;H01L29/788;H01L29/792;
国家 JP
入库时间 2022-08-21 23:31:27

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