首页>
外国专利>
PLASMA PROCESSING METHOD, PLASMA PROCESSING APPARATUS, PLASMA CHEMICAL VAPOR DEPOSITION METHOD, AND PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM
PLASMA PROCESSING METHOD, PLASMA PROCESSING APPARATUS, PLASMA CHEMICAL VAPOR DEPOSITION METHOD, AND PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM
展开▼
机译：等离子体处理方法，等离子体处理装置，等离子体化学气相沉积方法和等离子体化学气相沉积系统
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To decompose and reduce cluster generated in a plasma generation region while thermal deformation by heating a substrate or an electrode is controlled.;SOLUTION: A sign 10 indicates a vacuum film formation chamber in a plasma chemical vapor deposition system. In the vacuum film formation chamber 10, there is a ladder electrode 11 prepared as a flat-panel type electrode, and arrangement facing to the ladder electrode 11 with a prescribed space to each other is carried out, and a ground electrode 12, which is grounded, and a substrate 13 held by the ground electrode 12 are provided. A covering plate 16, which covers the ladder electrode 11 and the substrate 13, for preventing the generated plasma from dispersing to other parts in the vacuum film formation chamber 10 is provided. An Nd:YAG laser outgoing apparatus 25 for oscillating/feeding YAG pulse laser is provided at an outer side of the vacuum film formation chamber 10. In the vacuum film formation chamber 10, an inlet 26 for taking in the laser generated by the Nd:YAG laser outgoing apparatus 25 is provided.;COPYRIGHT: (C)2004,JPO
展开▼
