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Method of manufacturing a substrate of the substrate type - to - or insulating substrate - to - vacuum and the device obtained
Method of manufacturing a substrate of the substrate type - to - or insulating substrate - to - vacuum and the device obtained
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机译：基板类型至真空或绝缘基板至真空的基板的制造方法以及所获得的装置
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摘要
Substrate production involves epitaxially growing semiconductor layers on an initial substrate (1), defining and masking active zones, forming spacers and trenches, lateral etching of the first epitaxial layer, filling the formed tunnel with a dielectric for a Silicon-On-Insulator (SOI) substrate or leaving void for a Silicon-On-Nothing (SON) substrate, and filling the trenches with a dielectric. Production of a SOI substrate involves: (a) epitaxial growth, in sequence, of a Ge or SiGe layer and a Si layer (3) on an initial, preferably Si, substrate; (b) defining and masking active zones; (c) forming insulating spacers (7) in trench zones around the perimeter of each active zone at predetermined intervals and back-to-back with the sides of the active zones; (d) etching the trenches; (e) lateral etching of the Ge or SiGe layer; (f) filling the formed laterally etched space (tunnel) (8) with a dielectric, preferably SiO2, or passivation of tunnel walls followed by filling the tunnel (8) with a dielectric different from SiO2; (g) filling the trenches with a dielectric, preferably SiO2; and (h) performing finishing operations. Production of a SON substrate involves the same procedure except that stage (f) is omitted and passivation of the tunnel walls can be carried out prior to filling the trenches with a dielectric. The thickness of the Ge or SiGe layer is 1-50 nm, preferably 10-30 nm, and the thickness of the Si layer (3) is 10-50 nm, preferably 5-20 nm. Following the finishing operations a 'bulk' zone is produced in the SOI or SON substrate by masking, using a resin, the region that must be retained, followed by removal of layers in the unmasked region. A multilayer of alternating Si layers (3) and Ge or SiGe layers (2) can be formed in stage (a) of the SOI or SON substrate production process. Independent claims are given for: (i) a substrate having at least one active SOI active zone surrounded by isolating trenches; and (ii) a substrate having at least one active SOI active zone surrounded by isolating trenches.
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