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Integrated semiconductor circuit especially for power electronics has alternating conductivity doping types from drift region across double tubs to substrate
Integrated semiconductor circuit especially for power electronics has alternating conductivity doping types from drift region across double tubs to substrate
An integrated semiconductor circuit comprises a drift region (2) in a substrate (1) with a double tub isolation structure (30) between them and inner (8) and outer (9) doped tub regions. The regions from the drift region to the substrate are formed of layers of alternating p- and n-conductivity types.
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