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Process for calculating or manufacturing a mask for producing a structured mask or structure of an integrated circuit comprises calculating or manufacturing the mask based on the structured mask and/or structure
Process for calculating or manufacturing a mask for producing a structured mask or structure of an integrated circuit comprises calculating or manufacturing the mask based on the structured mask and/or structure
Process for calculating or manufacturing a mask (4) for producing a structured mask (6) or structure (2) of an integrated circuit comprises calculating or manufacturing the mask based on the structured mask and/or structure. A nominal value for at least one parameter is given for the structured mask and/or structure. The mask is calculated in such a way that the structured mask and/or structure contain a prescribed value region based on the parameter. The value region is directed asymmetrically to the nominal value of the parameter. A larger deviation of the value of the parameter from the nominal value is established in a small critical value direction for the quality or function of the structured mask and/or structure than in a critical value direction. Preferred Features: The mask is an exposure mask (4) which prepares an etching mask according to a photolithographic process.
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