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A smart process with alumina dielectric layer formation using ALE and a manufacturing method of unibond type SOI wafer
A smart process with alumina dielectric layer formation using ALE and a manufacturing method of unibond type SOI wafer
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机译：使用ALE形成氧化铝介电层的智能工艺和单键型SOI晶片的制造方法
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摘要
This invention is to manufacturing of SOI (Silicon On Insulator) wafer; With respect to manufacturing of SOI wafer, preparation process of silicon wafer with desired thickness (100), deposition of Alumina(Al2O3) as insulator by an ALE (Atomic Layer Epitaxial) method such as ALCVD, ALD, ASCVD, etc...(110), bonding of this wafer with another silicon wafer by various bonding methods (120), Cutting of this bonded wafer by various methods of cutting(130), Polishing the surface of the cut wafer (140). For the insulator material, titanium oxide (TiO2) or tantalum oxide(Ta2O5) can be used other than Alumina(Al2O3) and such bonding process can be done by unibonding method and cutting method can be done by Smart Cut process. IMAGE
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机译：本发明涉及绝缘体上硅（SOI）晶片的制造。关于SOI晶片的制造，具有所需厚度（100）的硅晶片的制备工艺，通过ALCVD，ALD，ASCVD等ALE（原子层外延）方法沉积作为绝缘体的氧化铝（Al2O3）... 110），通过各种键合方法将该晶片与另一硅晶片键合（120），通过各种切割方法130切割该键合晶片，抛光被切割的晶片140的表面。对于绝缘体材料，除了氧化铝（Al 2 O 3）之外，还可以使用氧化钛（TiO 2）或氧化钽（Ta 2 O 5），并且可以通过单键合方法进行这种接合过程，并且可以通过智能切割（Smart Cut）过程来进行切割方法。 <图像>
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