Silicon oxide layer reduced in dangling bonds through treatment with hypofluorous acid process for growing silicon oxide layer and method for deactivating dangling bonds therein

• 1. 悬空硅层的金属氧化物半导体场效应晶体管及其制造方法 [P] . 中国专利： CN1835248A . 2006-09-20
• 2. 气胀键具有悬空弹片的气胀轴 [P] . 中国专利： CN205739609U . 2016.11.30
• 3. Silicon oxide layer reduced in dangling bonds through treatment with hypofluorous acid, process for growing silicon oxide layer and method for deactivating dangling bonds therein [P] . 韩国专利： KR100514603B1 . 2005-09-14

  机译： 通过次氟酸处理减少了悬空键的氧化硅层，生长氧化硅层的方法和使悬空键失活的方法

• 4. Silicon oxide layer reduced in dangling bonds through treatment with hypofluorous acid, process for growing silicon oxide layer and method for deactivating dangling bonds therein [P] . 美国专利： US6896861B2 . 2005-05-24

  机译： 通过次氟酸处理减少了悬空键的氧化硅层，生长氧化硅层的方法和使悬空键失活的方法

• 5. Silicon oxide layer reduced in dangling bonds through treatment with hypofluorous acid, process for growing silicon oxide layer and method for deactivating dangling bonds therein [P] . 美国专利： US2003017347A1 . 2003-01-23

  机译： 通过用次氟酸处理减少了悬空键的氧化硅层，生长氧化硅层的方法和使悬空键失活的方法

• 1. The Role of Silicon Oxide Layers in Luminescence of Ensembles of Silicon Quantum Dots [J] . WANG Si-Hui, QIN Guo-Yi, REN Shang-Fen, 理论物理通讯（英文版） . 2001,第003期
• 2. Enhanced Current Transportation in Siliconriched Nitride(SRN)/Silicon-riched Oxide(SRO)Multilayer Nanostructure [J] . Yeliao Tao, Jun Zheng, Yuhua Zuo, 纳微快报：英文版 . 2012,第004期
• 3. Protonated and layered transition metal oxides as solid acids for dehydration of biomass-based fructose into 5-hydroxymethylfurfural [J] . Jiawei Zhong, Yuanyuan Guo, Jinzhu Chen 天然气化学（英文版） . 2017,第001期
• 4. Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents [C] . Lenahan P.M., Mele J.J., Campbell J.P., Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International . 2001
• 5. Coherence of Coupled Dangling-Bond Pairs on the Silicon Surface [D] . Shaterzadeh-Yazdi, Zahra. 2014
• 6. Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface [O] . Kengo Nishio, Tomoe Yayama, Takehide Miyazaki, -1
• 7. Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface [O] . Kengo Nishio, Tomoe Yayama, Takehide Miyazaki, 2018
• 8. Optically induced nitrogen dangling-bonds in amorphous hydrogenated silicon nitride thin films. [R] . W. L. Warren P. J. McWhorter J. Kanicki E. H. Poindexter 1991

• 1. FORMATION OF SILICONIZED LAYER ON TiAl-BASED ALLOY AND THE OXIDATION RESISTANCE [J] . W.Liang ,X.X.Ma ,X.G.Zhao . 金属学报：英文版 . 2003,第6期
• 2. SILICOM-OXYGEM-SILICON BOND-BREAKING BY MAGNESIUM DIETHOXIDE [J] . Ji Mao LIN(Department of Chemistry Shandong University Jinsa250100.) . 中国化学快报：英文版 . 1994,第7期
• 3. 基于硅氧键断裂的氟离子荧光探针 [A] . 张世玲 . 2015