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METHOD OF MANUFACTURE FOR 80 NANOMETER DIAMETER RESONANT TUNNELING DIODE WITH IMPROVED PEAK-TO-VALLEY RATIO AND RESONANT TUNNELING DIODE THEREFROM
METHOD OF MANUFACTURE FOR 80 NANOMETER DIAMETER RESONANT TUNNELING DIODE WITH IMPROVED PEAK-TO-VALLEY RATIO AND RESONANT TUNNELING DIODE THEREFROM
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机译：改进的峰谷比和谐振隧道二极管的80纳米直径谐振隧道二极管的制造方法
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摘要
A sub-micron, on the order of 80-nanometer diameter, resonant tunneling diode having a peak-to-valley ratio of approximately 5.1 to 1, and a method for its manufacture. The invention is unique in that its performance characteristics are unmatched in comparably sized resonant tunneling diodes. Further, the polyamide passivation and planerization methodology provides unexpected processing advantages with respect to application in the fabrication of resonant tunneling diodes. The invention includes a substrate (706) that serves as a foundation for bottom contact layer (708) and a polyamide (700) coating. An ohmic metal contact (702) and emitter metal contact (704) protrude above the polyamide (700) coating exposing the ohmic metal contact (702) and emitter metal contact (704). The contacts are capped with an etch resistant coating (710) thus allowing for the polyamide etch, and other etching processes without adversely affecting the contacts.
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