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Method for reducing stress and encroachment of sidewall oxide layer of shallow trench isolation
Method for reducing stress and encroachment of sidewall oxide layer of shallow trench isolation
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机译:减少浅沟槽隔离的侧壁氧化层的应力和侵蚀的方法
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摘要
The invention utilizes introductions of oxygen and hydroxyl to perform an in situ steam generated process to reoxidize a conventional sidewall oxide layer and density the oxide in a shallow trench isolation. The ISSG process renders the conventional sidewall oxide layer much less stress and encroachment. The electrical property of the active regions and the isolation quality between the active regions can be assured. The ISSG process can densify the oxide in a shallow trench isolation to prevent the oxide from being lost in the following clean process.
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