Silicon-controlled rectifier structures on silicon-on insulator with shallow trench isolation

• 1. 具有气隙的浅沟槽隔离结构、采用该浅沟槽隔离结构的互补金属氧化物半导体图像传感器及其制造方法 [P] . 中国专利： CN102138210B . 2014.05.07
• 2. 具有气隙的浅沟槽隔离结构、采用该浅沟槽隔离结构的互补金属氧化物半导体图像传感器及其制造方法 [P] . 中国专利： CN102138210A . 2011-07-27
• 3. Silicon-controlled rectifier structures on silicon-on insulator with shallow trench isolation [P] . 美国专利： US6987303B2 . 2006-01-17

  机译： 具有浅沟槽隔离的硅绝缘子上的可控硅整流器结构

• 4. Novel silicon-controlled rectifier structures on silicon-on insulator with shallow trench isolation [P] . 美国专利： US2004033645A1 . 2004-02-19

  机译： 具有浅沟槽隔离的硅绝缘子上的新型可控硅整流器结构

• 5. Method of forming a shallow trench isolation structure featuring a group of insulator liner layers located on the surfaces of a shallow trench shape [P] . 美国专利： US2004029353A1 . 2004-02-12

  机译： 形成浅沟槽隔离结构的方法，其特征在于，一组绝缘体衬里层位于浅沟槽形状的表面上

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