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Methods and apparatus for a composite collector double heterojunction bipolar transistor
Methods and apparatus for a composite collector double heterojunction bipolar transistor
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机译：复合集电极双异质结双极晶体管的方法和设备
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摘要
A compound collector double heterojunction bipolar transistor (CCHBT) incorporates a collector comprising two layers: a wide bandgap collector region (e.g., GaAs), and a narrow bandgap collector region (e.g., InGaP). The higher electric field is supported in the wide bandgap region, thereby increasing breakdown voltage and reducing offset voltage. At the same time, the use of wide bandgap material in the depleted portion of the collector, and a higher mobility material toward the end and outside of the depletion region, reduces series resistance as well as knee voltage.
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