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Tailoring piezoelectric properties using MgxZn1-xO/ZnO material and MgxZn1-xO/ZnO structures
Tailoring piezoelectric properties using MgxZn1-xO/ZnO material and MgxZn1-xO/ZnO structures
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机译：使用MgxZn1-xO / ZnO材料和MgxZn1-xO / ZnO结构调整压电性能
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摘要
The present invention provides magnesium zinc oxide (MgxZn1-xO) as a new piezoelectric material, which is formed by alloying ZnO and MgO. MgxZn1-xO allows for flexibility in thin film SAW and BAW device design, as its piezoelectric properties can be tailored by controlling the Mg content, as well as by using MgxZn1-xO/ZnO multilayer structures. To experimentally prove it, the MgxZn1-xO (x≦0.35) thin films are grown on r-plane sapphire substrates at a temperature in the range of 400° C.-500° C. by metalorganic chemical vapor deposition. MgxZn1-xO films with Mg mole percent up to 0.35 have epitaxial quality and wurtzite crystal structure. The SAW properties, including velocity dispersion and piezoelectric coupling, are characterized and concluded that the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg mole percent in piezoelectric MgxZn1-xO films.
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机译：本发明提供一种氧化锌镁（Mg x Zn 1-x O）作为新型压电材料，其通过将ZnO和MgO合金化而形成。 Mg x Zn 1-x O允许薄膜SAW和BAW器件设计具有灵活性，因为可以通过控制Mg含量以及使用Mg x Zn 1-x O / ZnO多层结构。为了实验证明，Mg x Zn 1-x O（x＆lE; 0.35）薄膜在r面蓝宝石衬底上于400°C的温度范围内生长;约-500℃ C.通过金属有机化学气相沉积。 Mg摩尔百分比高达0.35的Mg x Zn 1-x O薄膜具有外延质量和纤锌矿晶体结构。表征了声表面波特性，包括速度色散和压电耦合，并得出结论，声波速度增加，而压电耦合随着Mg x Zn 1-x < / Sub> O电影。
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