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Zn3P2-ZnO mixture thin film for photoluminescence and method of fabricating the same

机译:用于光致发光的Zn 3 P 2 -ZnO混合物薄膜及其制造方法

摘要

The present invention discloses a Zn3P2—ZnO mixture thin film for photoluminescence and a method of fabricating the same. The object of the present invention is to provide a Zn3P2—ZnO mixture thin film for photoluminescence and a method of fabricating the same which can generate the photoluminescence characteristics in a navy blue region by depositing a semiconductor mixture thin film of ZnO and Zn3P2 with a predetermined mole ratio on the upper surface of a sapphire substrate by pulsed laser deposition. According to the Zn3P2—ZnO mixture thin film for photoluminescence and the method of fabricating the same, a thin film having a flat surface property and the effective photoluminescence characteristics of a navy blue region can be fabricated by growing a thin film of a mixture material on a sapphire substrate by a deposition method using laser ablation by using a target of a mixture of ZnO and Zn3P2 having a mole ratio of 1:9. The PLD is being widely used as a deposition method of multicomponent compounds because it reduces the possibility of contamination by impurities and the composition of a thin film almost agrees with that of a target. In the present invention, the mixture ratio of a thin film material can be controlled by using the PLD and controlling the mixture ratio of the target material. As the result, a thin film for photoluminescence having a flat surface and a strong navy blue light emission can be obtained, and such a result can be used for a fluorescent material for a light emitting device very effectively and practically.
机译:本发明公开了用于光致发光的Zn 3 P 2 & ZnO混合物薄膜及其制造方法。本发明的目的是提供一种用于光致发光的Zn 3 P 2 & ZnO混合物薄膜及其制造方法,该薄膜可以在半导体中产生光致发光特性。通过以脉冲激光沉积在蓝宝石衬底的上表面上沉积具有预定摩尔比的ZnO和Zn 3 P 2 的半导体混合物薄膜,形成深蓝色区域。根据用于光致发光的Zn 3 P 2 & ZnO混合物薄膜及其制造方法,该薄膜具有平坦的表面性质和有效的光致发光特性。可以通过使用ZnO和Zn 3 P 2 的摩尔比为1:9。 PLD被广泛用作多组分化合物的沉积方法,因为它减少了杂质污染的可能性,并且薄膜的成分几乎与靶材的成分一致。在本发明中,可以通过使用PLD并控制靶材料的混合比来控制薄膜材料的混合比。结果,可以获得具有平坦的表面和强的深蓝色发光的用于光致发光的薄膜,并且这种结果可以非常有效和实用地用于发光器件的荧光材料。

著录项

  • 公开/公告号US2003186479A1

    专利类型

  • 公开/公告日2003-10-02

    原文格式PDF

  • 申请/专利权人 KIM YOUNG-CHANG;LEE SANG-YEOL;

    申请/专利号US20020161904

  • 发明设计人 SANG-YEOL LEE;YOUNG-CHANG KIM;

    申请日2002-06-04

  • 分类号H01L21/00;H01L21/44;H01L21/4763;

  • 国家 US

  • 入库时间 2022-08-22 00:09:00

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