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Epitaxial template and barrier for the integration of functional thin film metal oxide heterostructures on silicon
Epitaxial template and barrier for the integration of functional thin film metal oxide heterostructures on silicon
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机译：外延模板和势垒，用于在硅上集成功能性薄膜金属氧化物异质结构
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摘要
A ferroelectric memory cell formed on a monocrystalline silicon underlayer, either an epitaxial silicon contact plug to a transistor source or drain or silicon gate region for which the memory cell forms a non-volatile gate. A conductive barrier layer of doped strontium titanate, whether cationically substituted, such by lanthanum or niobium for strontium and titanium respectively, or anionically deficient, is epitaxially grown over the silicon, and a lower metal oxide electrode layer, a ferroelectric layer and an upper metal oxide electrode layer are epitaxially grown on the barrier layer. No platinum barrier is needed beneath the ferroelectric stack. The invention can be applied to many other functional oxide materials of the Ruddlesden-Popper and devices including micromachined electromechanical (MEM) devices and ferromagnetic tri-layer devices.
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