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Low-power, low-noise CMOS amplifier

机译:低功耗,低噪声CMOS放大器

摘要

Devices and methods for amplifying weak electric signals are described. The device of the invention includes an amplifier that is fully integrated in a standard CMOS process and is capable of rejecting large DC offsets while amplifying signals down to the sub-Hz range. This result is achieved by using single-transistor MOS “pseudo-resistor” elements to achieve a very low cutoff frequency in the mHz range or lower. When combined with an electrode array or other sensor array, the fully-integrated amplifier is suitable for recording biological and biopotential signals from the mhz range up to and including about 7 kHz. The amplifier also rejects dc offsets at the input and offers a superior power-noise tradeoff than other amplifiers currently available.
机译:描述了用于放大弱电信号的装置和方法。本发明的设备包括完全集成在标准CMOS工艺中的放大器,并且能够抑制大的DC偏移,同时放大至亚Hz范围的信号。通过使用单晶体管MOS“伪电阻”来实现该结果。元件可以在mHz范围或更低的范围内实现非常低的截止频率。当与电极阵列或其他传感器阵列结合使用时,完全集成的放大器适用于记录mhz范围内的生物和生物电势信号,频率范围高达7kHz(包括7kHz)。该放大器还抑制输入端的直流失调,并提供了比现有其他放大器更好的功率噪声折衷方案。

著录项

  • 公开/公告号US2003155966A1

    专利类型

  • 公开/公告日2003-08-21

    原文格式PDF

  • 申请/专利权人 HARRISON REID R.;

    申请/专利号US20020080950

  • 发明设计人 REID R. HARRISON;

    申请日2002-02-20

  • 分类号H03F1/02;

  • 国家 US

  • 入库时间 2022-08-22 00:10:40

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