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All dual damascene oxide etch process steps in one confined plasma chamber
All dual damascene oxide etch process steps in one confined plasma chamber
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机译：一个密闭等离子体室中的所有双镶嵌氧化蚀刻工艺步骤
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摘要
The present invention reveals a semiconductor dual damascene etching process, which uses a confined plasma etching chamber to integrate all dual damascene steps such as via hole etching, photoresist stripping and barrier layer removal which originally performed in various reactors as a continuous procedure in the confined plasma chamber. The confined plasma chamber including a confinement ring surrounding a wafer and an anti-etching upper electrode plate performs the steps mentioned above under clean mode. The present invention can not only reduce the time period required by the semiconductor dual damascene process but also greatly reduce the manufacturing cost.
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