首页> 外国专利> SILICON-BASED LIGHT-EMITTING/RECEIVING ELEMENT, METHOD OF MANUFACTURING THE SAME, SILICON-BASED OPTOELECTRIC INTEGRATED CIRCUIT, AND SILICON-BASED OPTOELECTRIC INTEGRATED CIRCUIT SYSTEM

SILICON-BASED LIGHT-EMITTING/RECEIVING ELEMENT, METHOD OF MANUFACTURING THE SAME, SILICON-BASED OPTOELECTRIC INTEGRATED CIRCUIT, AND SILICON-BASED OPTOELECTRIC INTEGRATED CIRCUIT SYSTEM

机译:基于硅的光发射/接收元件,相同制造方法,基于硅的光电集成电路以及基于硅的光电集成电路系统

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting/receiving element and an optical waveguide for realizing optical wiring in a silicon-based integrated circuit.;SOLUTION: This silicon-based light-emitting/receiving element is an efficient light emitting/receiving element utilizing the quantum size effect due to fine particles 15 of germanium existing in a second silicon crystal layer which is composed of an SOI layer 12 on an oxide film layer 11 and an intrinsic silicon epitaxial layer 16. The light emitted from these fine particles 15 is confined in a space sandwiched by the interface between the second silicon crystal layer and the oxide film layer 11 and another interface of the second silicon crystal layer on the opposite side to the oxide film layer 11. Consequently, the light is efficiently transmitted through the Second silicon crystal layer.;COPYRIGHT: (C)2003,JPO
机译:要解决的问题:提供一种半导体发光/​​接收元件和光波导,用于实现硅基集成电路中的光布线。;解决方案:这种硅基发光/接收元件是一种高效的发光/接收元件。利用由于存在于第二硅晶体层中的锗细颗粒15而产生的量子尺寸效应的电子接收元件,该第二硅晶体层由氧化膜层11上的SOI层12和本征硅外延层16组成。从这些细颗粒发出的光另外,图15所示的光被限制在由第二硅晶体层与氧化膜层11之间的界面和与氧化膜层11相反的一侧的第二硅晶体层的另一界面所夹着的空间内。第二硅晶体层。;版权所有:(C)2003,日本特许厅

著录项

  • 公开/公告号JP2003008054A

    专利类型

  • 公开/公告日2003-01-10

    原文格式PDF

  • 申请/专利权人 SHARP CORP;

    申请/专利号JP20010194702

  • 发明设计人 UDA KEIICHIRO;SAITO AKIRA;

    申请日2001-06-27

  • 分类号H01L31/12;G02B6/42;H01L33/00;

  • 国家 JP

  • 入库时间 2022-08-22 00:12:21

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