首页>
外国专利>
SINGLE CRYSTAL GALLIUM NITRIDE SUBSTRATE, CRYSTAL GROWTH METHOD FOR SINGLE CRYSTAL GALLIUM NITRIDE, AND PRODUCTION METHOD FOR SINGLE CRYSTAL GALLIUM NITRIDE SUBSTRATE
SINGLE CRYSTAL GALLIUM NITRIDE SUBSTRATE, CRYSTAL GROWTH METHOD FOR SINGLE CRYSTAL GALLIUM NITRIDE, AND PRODUCTION METHOD FOR SINGLE CRYSTAL GALLIUM NITRIDE SUBSTRATE
展开▼
机译：单结晶氮化镓基体，单结晶氮化镓的晶体生长方法和单结晶氮化镓基体的生产方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To overcome such difficulties that in the facet growth method for growing gallium nitride by forming and maintaining a facet, dislocation hazily extends from pit center parts comprising facet planes, thus radially developing plane defects and that since the positions where pits appear can not be controlled, a device can not be designed on the resulting single crystal.;SOLUTION: A stripe mask pattern is formed with regularity on a base substrate. On the pattern, straight V grooves (valleys) comprising facets are formed. While maintaining the V grooves (valleys), GaN is subjected to facet growth to form defects collection regions H at the V groove (valley) bottom parts comprising facet planes. Dislocation is collected at the region H to lower the dislocation in a low-defect single crystal region Z and a C-plane growth region around the region H. Because the region H is closed, the dislocation is confined and is not released again.;COPYRIGHT: (C)2003,JPO
展开▼
