首页>
外国专利>
Improvement of a substrate selectivity and etching rate of the silicon oxide by addition of xenon
Improvement of a substrate selectivity and etching rate of the silicon oxide by addition of xenon
展开▼
机译：通过添加氙提高了衬底选择性和氧化硅的刻蚀速率
展开▼
页面导航
摘要
著录项
相似文献
摘要
(57) A [Abstract] plasma etching process, during the oxide etch, when a corner that is easy to form the facets, selective oxide on top of those with non-oxide mixture, such as silicon nitride, especially It is useful for etching. Is combined with the (Xe) gas xenon dilution of a fairly large amount, (C 4 F 6) improves the selectivity of the nitride without the occurrence of etch stop major fluorine-containing gas, hexafluoride preferably butadiene. The chemistry is, for example, it is useful to etch the oxide in time an oxide etch as counter board Avaya dual damascene structure, the corners and holes are already formed. In this case, need not be very high relative amount of xenon, the xenon reduces the formation of facets at the corners of the oxide remains. The present invention may be used in the etching gas of fluorine-based and other fluorocarbon heavy relevant. Preferably, it contains the plasma etching is applied to the argon plasma, the switched bias power was reduced to gas in a fluorine-based and xenon, to stabilize the plasma, then, sufficient etching level to increase the bias.
展开▼
机译：（57）[摘要]等离子蚀刻工艺，在氧化物蚀刻过程中，当易于形成刻面的角时，在具有非氧化物混合物（例如氮化硅）的那些表面上选择性氧化，特别是对蚀刻非常有用。与相当大量的（Xe）气体氙稀释液组合使用（C 4 F 6）可以提高氮化物的选择性，而不会发生腐蚀停止现象在含气的气体中，六氟化物最好是丁二烯。该化学方法例如对于在对氧化物板进行刻蚀时有用，因为对接板Avaya双镶嵌结构已经形成了角和孔。在这种情况下，氙的相对含量不必很高，氙减少了在氧化物残留角上的小面的形成。本发明可以用于氟基和其他与重质有关的碳氟化合物的蚀刻气体中。优选地，将包含等离子体的等离子体蚀刻施加到氩等离子体上，将开关的偏置功率减小到氟基和氙气中的气体，以稳定等离子体，然后，以足够的蚀刻水平增大偏置。
展开▼
