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Liquid phase epitaxy - business raw materials and the production manner null of IIIV group
Liquid phase epitaxy - business raw materials and the production manner null of IIIV group
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机译：液相外延-IIIV集团的业务原材料和生产方式无效
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PURPOSE: To obtain uniform grain size by such a processing method that a breaking operation is easy, the cutting loss is small and waste chips can be easily collected at low cost, by pulverizing a specified polycrystalline ingot into particles whose surfaces are mostly cleavage planes and using these particles as the source material particles. ;CONSTITUTION: A polycrystalline ingot containing single crystal grains of 3mm cube by 30% of the whole volume is not formed into a wafer but once directly pulverized with a jaw crusher at 60 to 250 times/min reciprocating speed. The pulverized material is sifted through a 1 to 3-mm mesh to obtain particles of 0.5-6mm thickness and 4 to 20mm length and width. Most of pulverized particles are single crystals so that pulverization is not needed for a device maker. A III-V compd. semiconductor single crystal has brittle cleavage on {110} plane. Figure (1) shows the plan view of the principal planes and figure (2) shows the perspective view. When the material is used as a substrate to grow a crystal, a wafer having (100) plane as the surface is usually used. This block crystal has 26 planes and 12 of these are cleavages. The crystal cracks along these cleavages. The obtd. particles are sifted to remove a powder, etched with an etching liquid and then washed with water.;COPYRIGHT: (C)1995,JPO
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机译：目的：通过一种易于破碎的加工方法来获得均匀的晶粒尺寸，通过将特定的多晶锭粉碎成表面主要为分裂面的颗粒，从而可以低成本地收集切屑，并且可以廉价地收集废屑。使用这些粒子作为原料粒子。 ;组成：包含> 3mm立方晶格且占总体积> 30％的多晶锭不会成型为晶圆，而是用颚式破碎机以60至250次/分钟的往复速度直接粉碎。将粉碎的材料筛过1-3mm的筛网，以获得0.5-6mm的厚度和4-20mm的长度和宽度的颗粒。粉碎的颗粒大多数是单晶，因此设备制造商不需要粉碎。 A III-V压缩。半导体单晶在{110}平面上具有脆性裂解。图（1）示出了主平面的平面图，图（2）示出了立体图。当将该材料用作生长晶体的衬底时，通常使用具有（100）面作为表面的晶片。该块状晶体具有26个平面，其中12个为解理平面。沿着这些分裂的晶体破裂。奥特。筛分颗粒以除去粉末，用蚀刻液蚀刻，然后用水洗涤。;版权所有：（C）1995，日本特许厅
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