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Power semiconducting component has length of gate electrode layer on first isolation film and total isolation film thickness directly beneath gate electrode tip that exceed/equal lower limits
Power semiconducting component has length of gate electrode layer on first isolation film and total isolation film thickness directly beneath gate electrode tip that exceed/equal lower limits
The device has a high standing voltage lateral MISFET element with a channel zone on a main substrate surface, a source zone in the channel zone, a drain zone separated from the channel zone by a drain-drift zone and drain, gate and source electrode layers. The gate electrode layer length on a first isolation film and the total isolation film thickness directly beneath the gate electrode layer tip exceed or equal lower limits. The device has a high standing voltage lateral MISFET element with a channel zone (2) of a first conductivity type on a main surface side of a substrate (1), a source zone (3) of a second conductivity type within the channel zone, a drain zone (6) of second conductivity type separated from the channel zone by a drain-drift zone (5) of second type, drain, gate and source electrode layers (12,9,6). The length of the gate electrode layer on a first isolation film and the total isolation film thickness directly beneath the tip of the gate electrode layer exceed or equal lower threshold values.
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