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Self-aligning double gate MOSFET with separate gates has channel region, first gate above channel region, second gate below channel region; gates are electrically mutually isolated
Self-aligning double gate MOSFET with separate gates has channel region, first gate above channel region, second gate below channel region; gates are electrically mutually isolated
The device has a channel region, a first gate above the channel region, a second gate below the channel region, whereby the gates are electrically mutually isolated. The first gate can have a different doping concentration from the second gate. The first gate can have a different doping material from the second gate. Gate dielectrics can be arranged below the first gate and above the second gate. Independent claims are also included for the following: a semiconducting chip with at least one transistor and a method of forming a transistor.
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