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Process for growing single crystals, especially silicon single crystals comprises pulling the single crystals with rotation from a heated crucible containing a melt made from the crystal material, and cooling the crystals
Process for growing single crystals, especially silicon single crystals comprises pulling the single crystals with rotation from a heated crucible containing a melt made from the crystal material, and cooling the crystals
Process for growing single crystals, especially silicon single crystals according to the Czochralski method comprises pulling the single crystals with rotation from a heated crucible (7) containing a melt (3) made from the crystal material; and cooling the crystals formed above the phase boundary. An Independent claim is also included for a device for growing single crystals comprising a cooling device (1) concentrically surrounding the crystal to be grown. Preferred Features: The cooling device is a metal tube made from a double wall flexible metal bellows in which argon, nitrogen, helium, or a liquid medium made from gallium, indium, tin, mercury or water is circulated.
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