首页> 外国专利> Production of optoelectronic semiconductor element used as LED or laser diode comprises preparing a layer of amorphous Group III element nitride containing a rare earth element, and heat treating whilst inserting the rare earth element

Production of optoelectronic semiconductor element used as LED or laser diode comprises preparing a layer of amorphous Group III element nitride containing a rare earth element, and heat treating whilst inserting the rare earth element

机译：用作LED或激光二极管的光电半导体元件的生产包括准备一层包含稀土元素的非晶态III族元素氮化物，并在插入稀土元素的同时进行热处理

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Production of an optoelectronic semiconductor element comprises preparing a layer of amorphous III nitride containing a rare earth element; and heat treating whilst inserting the rare earth element to electrically activate the rare earth element. An electrode is arranged on both sides of the nitride layer. One of the electrodes arranged on one side is transparent for the light radiation emitted by the nitride layer and absorbed by the electrode. Preferred Features: The nitride layer is deposited together with the rare earth element by co-sputtering. The rare earth element is diffused into the nitride layer and heat treatment is carried out during the diffusing. Heat treatment is carried out at 400-800 deg C for 1-30 minutes.

机译：光电子半导体元件的制造包括：制备包含稀土元素的非晶态III族氮化物层;以及制备非晶态III族氮化物层。并在插入稀土元素以电激活稀土元素的同时进行热处理。电极布置在氮化物层的两侧。布置在一侧上的电极之一对于由氮化物层发射并由电极吸收的光辐射是透明的。优选特征：通过共溅射将氮化物层与稀土元素一起沉积。稀土元素扩散到氮化物层中，并且在扩散过程中进行热处理。热处理在400-800℃下进行1-30分钟。

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公开/公告号DE10055710A1

专利类型
公开/公告日2002-05-23

原文格式PDF
申请/专利权人 STRUNK HORST P.;
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申请/专利号DE20001055710
发明设计人 STRUNK HORST P.;ALDABERGENOVA SAULE;ANDREEV ARKAND A.;
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申请日2000-11-10
分类号H05B33/10;H01L31/0304;H01L31/0376;H05B33/12;H05B33/14;
国家 DE
入库时间 2022-08-22 00:27:20

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