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High temperature component used as heating element in gas sensor comprises non-conducting intermediate layer between conducting pathway and silicon dioxide conducting pathway protection layer
High temperature component used as heating element in gas sensor comprises non-conducting intermediate layer between conducting pathway and silicon dioxide conducting pathway protection layer
A high temperature component comprises a non-conducting intermediate layer between a conducting pathway (2) and a silicon dioxide conducting pathway protection layer (4b). The intermediate layer is thicker than the protection layer. Preferred Features: The conducting pathway is made from platinum and is formed as a hot conductor pathway in a meander-like manner on the ceramic substrate (3). The silicon dioxide layer has a thickness of 0.1-1.5 microns m and the intermediate layer has a thickness of 1-5 microns m. The intermediate layer is made from aluminum oxide.
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