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Monitoring of nitrogen processes involves subjecting silicon surface to nitrogen process, producing oxide layer on the surface by thermal oxidation, and determining a thickness of oxide layer as measure for nitrogen process quality
Monitoring of nitrogen processes involves subjecting silicon surface to nitrogen process, producing oxide layer on the surface by thermal oxidation, and determining a thickness of oxide layer as measure for nitrogen process quality
Nitrogen processes are monitored by; (i) providing a silicon surface; (ii) subjecting the silicon surface to a nitrogen process; (iii) producing an oxide layer on the silicon surface by thermal oxidation for a specified duration; and (iv) determining a thickness of the oxide layer as a measure for a quality of the nitrogen process.
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