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JUNCTION MOTT TRANSITION FIELD EFFECT TRANSISTORJMTFET AND SWITCH FOR LOGIC AND MEMORY APPLICATIONS
JUNCTION MOTT TRANSITION FIELD EFFECT TRANSISTORJMTFET AND SWITCH FOR LOGIC AND MEMORY APPLICATIONS
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机译：逻辑和存储器应用中的结模过渡场效应晶体管和开关
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摘要
The invention first insulator of sandwiching the first and second contacts, the first and a part of the film, the channel material of the doped first insulator material in the is interposed between the second contact formed on the channel material doped material in that the interface (interface) to a semiconductor device including a second insulator material. A second insulator material is doped to have a carrier of opposite charge with respect to the carrier (carrier) in the channel material.
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