首页> 外国专利> HIGH-DENSITY DATA STORAGE UNIT USING ASYMMETRIC HYSTERETIC PROPERTY OF FERROELECTRIC AND DATA RECORDING/REPRODUCING METHOD THEREOF

HIGH-DENSITY DATA STORAGE UNIT USING ASYMMETRIC HYSTERETIC PROPERTY OF FERROELECTRIC AND DATA RECORDING/REPRODUCING METHOD THEREOF

机译:铁电体不对称迟滞特性的高密度数据存储单元及其数据记录/再现方法

摘要

PURPOSE: A high-density data storage unit using asymmetric hysteretic property of ferroelectric and a data recording/reproducing method are provided to easily discriminate '0' bit and '1' bit from each other by detecting capacity of a ferroelectric capacitor. CONSTITUTION: A high-density data storage unit uses a ferroelectric capacitor having upper and lower electrodes(22,24) formed of different materials in order to asymmetric hysteretic property. A recording/reproducing method of the high-density data storage unit includes a step of applying DC voltage in one direction to the ferroelectic capacitor at a specific temperature for a predetermined period of time to record information, and a step of applying read voltage in the same direction as the voltage direction in which hysteresis loop of the ferroelectric capacitor moves to read the recorded information.
机译:目的:提供一种利用铁电体的非对称磁滞特性的高密度数据存储单元和一种数据记录/再现方法,以通过检测铁电电容器的电容来容易地将“ 0”位和“ 1”位彼此区分开。组成:高密度数据存储单元使用铁电电容器,该铁电电容器具有由不同材料形成的上下电极(22,24),以实现不对称的磁滞特性。高密度数据存储单元的记录/再现方法包括以下步骤:在特定温度下在预定温度下向铁电电容器施加一个方向的直流电压预定时间,以记录信息;以及在第一方向上施加读取电压的步骤。与铁电电容器的磁滞回线移动以读取记录的信息的电压方向相同的方向。

著录项

  • 公开/公告号KR100327483B1

    专利类型

  • 公开/公告日2002-02-22

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR19980007733

  • 发明设计人 YOO IN GYEONG;

    申请日1998-03-09

  • 分类号G11B5/62;

  • 国家 KR

  • 入库时间 2022-08-22 00:29:55

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