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- Control methodology of InGaAs/InGaAsP quantum well bandgap by the combination of dielectric-semiconductor capping layer in quantum well intermixing
- Control methodology of InGaAs/InGaAsP quantum well bandgap by the combination of dielectric-semiconductor capping layer in quantum well intermixing
The invention quantum well disordered described dielectric-relates to an operation method of the InGaAs / InGaAsP quantum well band gap of the semiconductor capping layer in combination, localized in a different band gap gene cover layer InGaAs / InGaAsP quantum well structure substrate using in the quantum well disordered process for forming, using the SiN X and SiO 2 in the dielectric capping layer using InP or InGaAs or InGaAsP having the same thickness as the semiconductor cap layer of InGaAs / InGaAsP quantum well above the quantum well to both by forming a forming a semiconductor combination to a quantum-well substrate, and the predetermined temperature and locally different bandgap in the quantum well structure of the substrate through the heat treatment of a predetermined time-disordered, the dielectric capping layer and a semiconductor using the cover-layer dielectric if You may adjust the band gap of the amount of movement of the well structure.
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