首页> 外国专利> Diamond thin film formation method by laser ablation combined with high voltage discharge plasma CVD and diamond bulk fabrication method under the conditions of high temperature and high pressure

Diamond thin film formation method by laser ablation combined with high voltage discharge plasma CVD and diamond bulk fabrication method under the conditions of high temperature and high pressure

机译:高温高压条件下激光烧蚀结合高压放电等离子体CVD形成金刚石薄膜的方法及金刚石块的制造方法

摘要

The present invention condenses the laser beam 2 generated from the laser source 1, which is a laser generation source, with a lens 3, thereby eliminating the need for a separate rotary motor 5 located in the vacuum chamber 4, thereby fixing the high purity graphite target 6 unnecessary. ), The ablation phenomenon (laser plume 7) generated on the surface thereof upon irradiation and the discharge plasma 9 generated between the graphite cathode 6 and the graphite anode 8 are mixed together. When the diamond is formed on the substrate 11 on the graphite anode 8 without heating the substrate 11 by a separate substrate heater 10 due to the high temperature at the center of the generated plasma 9, the plasma zone ), And a large amount of atomic hydrogen is supplied to the guide tube 13 into the reactor 12 located inside the vacuum chamber 4 from the outside. Efficiently on Function to form a high quality seed diamond thin film, which is sandwiched in a specially designed high temperature high pressure furnace and sandwiched with a high purity graphite plate or DLC (Diamond like carbon) powder between the thin films. When high temperature is reached, high pressure is applied to form diamond bulk, and hydrogen gas is charged up to a constant pressure in the lamination wrapped with tantalum (Ta) or Mo so that atomic hydrogen can function as in thin film formation. The present invention relates to a diamond thin film production by a laser ablation method and a high voltage discharge plasma CVD method (lasma mixing method), and a method of forming diamond bulk under high temperature and high pressure conditions.
机译:本发明将由作为激光产生源的激光源1产生的激光束2与透镜3会聚,从而不需要在真空室4中设置单独的旋转马达5,从而固定了高纯度石墨。目标6不必要。 ),将在照射时在其表面上产生的烧蚀现象(激光羽流7)与在石墨阴极6和石墨阳极8之间产生的放电等离子体9混合在一起。当在石墨阳极8上的基板11上形成金刚石而不由于产生的等离子体9的中心处的高温而通过单独的基板加热器10加热基板11时,等离子体区()和大量原子氢从外部被供应到位于真空室4内部的反应器12中的导管13。有效发挥功能,形成高质量的籽晶金刚石薄膜,该薄膜夹在特殊设计的高温高压炉中,并在薄膜之间夹有高纯度石墨板或DLC(类金刚石)粉末。当达到高温时,施加高压以形成金刚石块,并且在用钽(Ta)或钼包裹的叠层中将氢气充入恒定压力,以使原子氢可以像薄膜形成一样起作用。本发明涉及通过激光烧蚀法和高压放电等离子体CVD法(等离子体混合法)生产的金刚石薄膜,以及在高温高压条件下形成金刚石块的方法。

著录项

  • 公开/公告号KR100324500B1

    专利类型

  • 公开/公告日2002-03-13

    原文格式PDF

  • 申请/专利权人 김종일;

    申请/专利号KR20000009242

  • 发明设计人 김종일;

    申请日2000-02-24

  • 分类号H01L21/26;

  • 国家 KR

  • 入库时间 2022-08-22 00:29:55

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