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IN-SITU METALIZATION MONITORING USING EDDY CURRENT MEASUREMENTS AND OPTICAL MEASUREMENTS

机译:利用涡流测量和光学测量进行原位金属化监测

摘要

It is used the invention discloses a kind of acquisition in situ about film sample and removes film during eddy current probes technique. The eddy current probes have at least one induction coil. Alternating voltage is applied to the eddy current probes of induction coil (one or more). (one or more) eddy current probes of one or more first signal measure in sensor coils are located in induction coil (one or more) close to film sample. (one or more) eddy current probes of one or more second signal measure in sensor coils, which are positioned adjacent to reference material in induction coil (one or more), has fixed ingredient and/or from induction coil. Undesired gain and/or phase change of first signal calibration based on second signal, so that in the correction of the first signal. The attribute value that a kind of film determines is the first signal based on calibration. One kind is also disclosed for executing the above method. It is disclosed in addition, chemically mechanical polishing (CMP) system polishes sample monitoring sample with polishing agent. The CMP system includes on polishing block, and carrier is arranged to keep the sample in polishing block and eddy current probes.
机译:本发明公开了一种用于在薄膜样品上原位采集并在涡流探针技术中去除薄膜的方法。涡流探头具有至少一个感应线圈。将交流电压施加到感应线圈(一个或多个)的涡流探头。 (一个或多个)传感器线圈中一个或多个第一信号测量值的涡流探头位于感应线圈(一个或多个)中,靠近薄膜样品。传感器线圈中一个或多个第二信号测量值的(一个或多个)涡流探头与感应线圈(一个或多个)中的参考材料相邻放置,具有固定的成分和/或来自感应线圈。基于第二信号校准第一信号的不希望的增益和/或相位变化,从而在校正第一信号时。一种膜确定的属性值是基于校准的第一信号。还公开了一种用于执行上述方法的方法。另外公开了化学机械抛光(CMP)系统用抛光剂抛光样品监测样品。 CMP系统包括在抛光块上,并且载体被布置成将样品保持在抛光块和涡流探头中。

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